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| HAT1031T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-528D (Z) 5th. Edition December 1998 Features * * * * Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP-8 65 34 87 1 D 8 D 12 4 G 5 G SS 23 SS 67 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate MOS1 MOS2 HAT1031T Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -20 10 -2.5 -20 -2.5 Unit V V A A A W W C C Body-drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 1 1.5 150 -55 to +150 1. PW 10s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25C) Item Symbol Min -20 10 -- -- -0.5 -- -- 2.6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.13 0.21 4 390 200 70 14 75 60 55 -0.9 45 Max -- -- 10 -1 -1.5 0.16 0.28 -- -- -- -- -- -- -- -- -1.17 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = -2.5A, VGS = 0 Note4 IF = -2.5A, VGS = 0 diF/ dt =20A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 8V, VDS = 0 VDS = -20 V, VGS = 0 VDS = -10V, I D = -1mA I D = -2A, VGS = -4V Note4 I D = -2A, VGS = -2.5V Note4 I D = -2A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -2A VDD -10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 HAT1031T Main Characteristics Power vs. Temperature Derating 2.0 -100 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 1.5 -30 -10 -3 -1 Maximum Safe Operation Area PW=10 s Pch (W) I D (A) Channel Dissipation 1.0 Drain Current 100s 1 m s DC 10 (P Op ms W er < 10 s) 2 Dr ive ion at er Op 1 0.5 Dr ive Op er at ion 150 Ta (C) 200 0 50 100 Ambient Temperature ot Operation in e -0.3 5 this area is limited by R DS(on) -0.1 Ta = 25 C -0.03 1 shot Pulse 1 Drive Operation -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) N at ion Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics -20 -10 V -8 V Pulse Test -10 Typical Transfer Characteristics Tc = -25 C I D (A) -4 V -3.5 V (A) -16 -6 V -8 25 C 75 C -12 ID Drain Current -6 Drain Current -8 -3 V -4 -2.5 V -4 VGS = -2.0 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -2 V DS = -10 V Pulse Test -2 -4 -6 Gate to Source Voltage -8 -10 V GS (V) 0 3 HAT1031T Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2 Pulse Test 1 0.5 0.2 0.1 -2.5 V Drain to Source Saturation Voltage V DS(on) (V) Pulse Test -0.4 -0.3 I D = -2 A -1 A -0.5 A -6 -2 -4 Gate to Source Voltage -0.2 Drain to Source On State Resistance R DS(on) ( ) -0.5 VGS = -4 V -0.1 0.05 0 -10 V GS (V) -8 0.02 -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 I D = -2 A 0.3 -2.5 V 0.2 -2 A, -1 A, -0.5 A V GS = -4 V 0 40 80 120 160 Case Temperature Tc (C) -1 A, -0.5 A Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 25 C 2 1 0.5 0.2 0.1 -0.2 75 C 0.1 0 -40 V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) 4 HAT1031T Body-Drain Diode Reverse Recovery Time 500 10000 3000 1000 Ciss 300 100 30 10 0 -10 -20 -30 Coss Crss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 100 50 20 10 di / dt = 20 A / s VGS = 0, Ta = 25 C Capacitance C (pF) 200 5 -0.5 -1 -2 -5 -10 -0.1 -0.2 Reverse Drain Current I DR (A) VGS = 0 f = 1 MHz -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 0 VDD = -5 V -10 V -25 V 0 500 Switching Characteristics V GS = -4 V, V DD = -10 V PW = 3 s, duty < 1 % Switching Time t (ns) -10 -2 200 100 50 t d(on) tf tr Drain to Source Voltage -20 V DS V DD = -25 V -10 V -5 V V GS -4 -30 -6 Gate to Source Voltage 20 10 5 -0.1 -0.2 t d(off) -0.5 -1 -2 -5 Drain Current I D (A) -10 -40 -50 I D = -2.5 A 0 1.6 3.2 4.8 6.4 Gate Charge Qg (nc) -8 -10 8 5 HAT1031T Reverse Drain Current vs. Souece to Drain Voltage -10 Reverse Drain Current I DR (A) -8 V GS = -5 V 0, 5 V -6 -4 -2 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin Switching Time Waveform 10% 90% Vin -4 V 50 V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 6 HAT1031T Normalized Transient Thermal Impedance vs. Pulse Width ( 1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 tp ho 1s uls e ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width ( 2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 ch - f(t) = s (t) * ch - f ch - f = 210 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) lse pu PDM PW T 0.001 t ho 1s D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 7 HAT1031T Package Dimentions Unit: mm 3.00 0.1 4.40 0.1 8 5 1 4 1.10 Max 6.40 0.20 0.17 0.05 0.07 +0.03 -0.04 0.65 0.10 0.22 +0.08 -0.07 0-8 0.50 0.10 0.13 M Hitachi code EIAJ JEDEC TTP-8D -- -- 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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